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Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 93: III-V semiconductors (other than nitrides)

HL 93.8: Talk

Thursday, March 19, 2015, 17:30–17:45, EW 203

High-power 1060-mn photonic band crystal lasers with narrow beam divergence and low astigmatism — •Md. Jarez Miah1, Thorsten Kettler1,2, Kristijan Posilovic1,2, Vladimir P. Kalosha1, Danilo Skoczowsky2, Dieter Bimberg1, Johannes Pohl3, and Markus Weyers31Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany — 2PBC Lasers GmbH, Hardenbergstr. 36, 10623 Berlin, Germany — 3Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

High-power edge-emitting lasers are efficient and indispensable light sources for a wide range of scientific and commercial applications such as pump sources for solid-state lasers, frequency conversion, material processing, and medicine. High-power edge-emitting photonic band crystal lasers emitting in the commercially important 1060 nm wavelength range are investigated. Highest to date single transverse mode output power of 1.9 W is obtained from ridge waveguide lasers with 9 µm ridge width and 2.64 mm cavity length. Extended vertical waveguides result in a very narrow vertical far-field divergence below 14 (full width at half maximum) across full single mode operating regime. The corresponding lateral beam divergence is 9. The lasers provide excellent beam quality with beam quality factor M2 below 1.9 up to 1.9 W output power. A brightness as high as 72 MWcm−2sr−1 is achieved. The measured astigmatism varies only from 5 µm to 14 µm over the entire operating range, which means almost astigmatism-free.

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