Berlin 2015 – wissenschaftliches Programm
HL 98.10: Vortrag
Freitag, 20. März 2015, 12:00–12:15, EW 201
Photoluminescence of GaN grown by high temperature vapor phase epitaxy — •Friederike Zimmermann1, Jan Beyer1, Gleb Lukin2, Olf Pätzold2, Christian Röder1,3, Michael Stelter2, and Johannes Heitmann1 — 1Institut für Angewandte Physik, TU Bergakademie Freiberg, Leipziger Str. 23, D-09599 Freiberg, Germany — 2Institut für Nichteisenmetallurgie und Reinststoffe, TU Bergakademie Freiberg, Leipziger Str. 34, D-09599 Freiberg, Germany — 3Institut für Theoretische Physik, TU Bergakademie Freiberg, Leipziger Str. 23, D-09599 Freiberg, Germany
High temperature vapor phase epitaxy (HTVPE) is a promising process for chlorine-free growth of GaN. We report on a photoluminescence study on GaN samples grown in a modified HTVPE reactor, which was designed to overcome some of the drawbacks of HTVPE growth. All samples show an overall high luminescence efficiency increasing with III/V-ratio. At 15 K the spectra are dominated by a DAP-like transition at 3.27 eV indicating the presence of acceptors. The near band edge region shows two broad excitonic features which can be ascribed to the common residual donor bound excitons at 3.473 eV and an acceptor bound exciton at 3.462 eV. A carbon contamination cannot be ruled out. The HTVPE samples generally show a much lower variety of radiative defects compared to GaN grown by other methods.