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Berlin 2015 – scientific programme

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MA: Fachverband Magnetismus

MA 19: POSTER Ia

MA 19.51: Poster

Tuesday, March 17, 2015, 09:30–13:00, Poster A

Low-field AMR in planar Hall effect structured manganites — •Eduard Unger1, Camillo Ballani1, Alexander Belenchuk2, Sabastian Hühn1, Markus Jungbauer1, Markus Michelmann1, and Vasile Moshnyaga11I. Physikalisches Institut, Universität Göttingen — 2IIEN, Academy of Sciences of Moldova, 3/3 Academiei street, MD-2628 Chisinan, Republic of Moldova

The anisotropic magnetoresistance (AMR) is widely used for sensing of both direction and absolute value of magnetic fields. Besides conventionally used ferromagnetic metallic materials, like permalloy (Ni80Fe20), thin epitaxial manganite films, e.g. La0.7(Sr1−yCay)0.3MnO3, show large AMR ratios at temperatures slightly below TC, which can be tuned close to room temperature by changing the Sr/Ca ratio. For a special AMR geometry, called "planar Hall effect", the transverse voltage is a measure for the samples magnetization, M, thus allowing one to achieve very high field sensitivity by applying a small bias magnetic field close to coercive field HC, where the largest effect dM/dH is expected. With the goal to achieve low HC and high AMR ratios, we have grown thin manganite films on SrTiO3 substrates with different orientations by metalorganic aerosol deposition (MAD) technique and studied the dependence of planar Hall effect on the temperature, applied magnetic field, film thickness and form anisotropy by combining electrical measurement with a MOKE setup in order to link magnetic and electrical properties. Financial support from EU FP 7 Project IFOX (interfacing oxides) is acknowledged.

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