Berlin 2015 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 38: Semiconductor Substrates
O 38.2: Poster
Dienstag, 17. März 2015, 18:15–21:00, Poster A
Study of the ZnO surface by XSW: elucidating the position of adsorbed oxygens — •Antoni Franco-Cañellas1, Jens Niederhausen2, Martin Oehzelt2,3, Tien-Lin Lee4, Alexander Gerlach1, Norbert Koch2,3, and Frank Schreiber1 — 1Institut für Angewandte Physik, Universität Tübingen, Tübingen, Germany — 2Institut für Physik, Humboldt-Universität zu Berlin, Germany — 3Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, BESSY II, 12489 Berlin, Germany — 4Diamond Light Source, UK
For its promising applications in optoelectronics and sensing devices, zinc oxide (ZnO) has attracted significant attention in the last decades. Of particular interest in this context are devices based on the combination of ZnO with different organic semiconductor materials. It is well known that for these heterostructures the characterization of the interface is of paramount importance to understand and tune the properties of the final device [1]. In this work we focus on the study of the ZnO surface, for different terminations, using the X-ray standing wave technique (XSW) [2] and photoelectron spectroscopy. Particularly, the adsorption site of the hydroxil (OH-) groups is resolved. These results will help to elucidate how the OH-groups affect deposited organic layers. Furthermore, they can provide information on surface-driven phenomena, which are specially important for ZnO nanostructures with high surface-to-volume ratio.
[1] Y. Xu et al. Phys. Rev. Lett., 111 (2013) 226802.
[2] A. Gerlach et al., in The Molecule-Metal Interface (eds N. Koch, N. Ueno and A. T. S. Wee), Wiley-VCH, Weinheim, Germany (2013).