Berlin 2015 – scientific programme
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O: Fachverband Oberflächenphysik
O 63: 2D Materials beyond Graphene
O 63.4: Poster
Wednesday, March 18, 2015, 18:15–21:00, Poster A
Epitaxial growth of MoS2 monolayers on graphene/SiC — •Maciej Dendzik1,2, Jill Miwa1,2, Soren Ulstrup1,2, Signe Gronborg Sorensen2, Antonija Grubisic Cabo1,2, Marco Bianchi1,2, Matteo Michiardi1,2, Jeppe Vang Lauritsen2, and Philip Hofmann1,2 — 1Aarhus University, Department of Physics and Astronomy, Aarhus, Denmark — 2Aarhus University, Interdisciplinary Nanoscience Center, Aarhus, Denmark
Monolayers of transition metal dichalcogenides (TMDCs) are a novel class of materials which recently attracted considerable attention due to their interesting physical properties and possible applications in fields of electronics and spintronics. Nevertheless, the growth of high quality single-layered films of TMDCs still remains a challenge. Here we present an in situ physical vapour deposition approach of growing MoS2 monolayers. Intermediate stages of the process are characterised by means of scanning tunneling microscopy, providing an insight into the growth mechanism. Grown samples are further investigated by angle resolved photoemission and compared with MoS2 monolayers grown on Au(111). The results indicate high quality and large coverage of the monolayer.