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O: Fachverband Oberflächenphysik
O 88: Electronic Structure: Surface Magnetism and Spin Phenomena
O 88.2: Talk
Thursday, March 19, 2015, 15:15–15:30, MA 042
High out-of-plane spin polarization induced by non-centrosymmetric crystal structure of BiTeI — •Christian Langenkämper1, Koji Miyamoto1, Oleg E Tereshchenko2, Konstantin A Kokh2, Peter Krüger3, and Markus Donath1 — 1Physikalisches Institut, Westfälische Wilhelms-Universität Münster, Germany — 2Novosibirsk State University, Russia — 3Institut für Festkörpertheorie, Westfälische Wilhelms-Universität Münster, Germany
So far, Rashba spin splittings have been discussed mostly for surface states on the basis of the Rashba-Bychkov model. Recently, a new class of Rashba materials has attracted attention: In non-centrosymmetric materials like MoS2 [1] and BiTeI [2] the bulk Rashba effect is responsible for lifting the spin degeneracy. So far, almost all photoemission studies of BiTeI are focused on Rashba effects in the occupied states around the Γ point. For future applications, e.g. in opto-spintronics, a substantiated knowledge about the spin-split states above the Fermi level is also needed.
We examined the unoccupied band structure of BiTeI along the ΓK direction with spin-resolved inverse photoemission. At the K points at the Brillouin zone boundary, we found a high out-of-plane spin polarization caused by the non-centrosymmetric crystal structure. This case will be discussed on the basis of band calculations.
[1] Suzuki et al., Nat. Nanotechnology 9, 611 (2014)
[2] Ishizaka et al., Nature Mater. 10, 521 (2011)