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Berlin 2015 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 105: Quantum Information Systems: Si Vacancies and NV Centers (jointly with HL)

TT 105.1: Talk

Thursday, March 19, 2015, 15:00–15:15, ER 164

Spin Physics of vacancy-related defects in silicon carbide — •Michel Bockstedte1,2 and Felix Schütz11Lst. Theor. Festkörperphysik, Friedrich-Alexander Universität Erlangen-Nürnberg, 91058 Erlangen, Germany — 2FB Materialwissenschaften & Physik, Universität Salzburg, 5020 Salzburg, Austria

SiC as a semi conductor fullfills all necessary requirements1 for implenting qubits via defect electron spins, such as the silicon vacancy, the di-vacancy or a complex of a silicon vacancy and a nitrogen impurity. The spin-selective fluorescence in contrast to the prototypical NV-center in diamond operates in the spectral range favorable for telecom applications. Spin-manipulation of the intrinsic centers was demonstrated even at room temperature.2,3 For the silicon vacany in SiC inter system crossings (ISCs) from high to yet unknown low spin states govern the spin-relaxation. By DFT and a DFT-based CI-hamiltonian we analyze the spin physics of the defect in 4H-SiC. Experimentally observed luminescence lines can be assigned to the inequivalent defect sites corobarating the experimental findings. Owing to the spin (S=3/2) and a stronger electron-phonon coupling in the excited state, ISCs destinct from the NV-center are predicted.
1 J. R. Weber et al., PNAS 107, 8513 (2010).
2 F. Koehl et al., Nature479, 84 (2011).
3 V. A. Soltamov et al., Phys. Rev. Lett. 108 226402 (2012)

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