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Berlin 2015 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 24: Focus Session: Functional Semiconductor Nanowires II (organized by HL)

TT 24.5: Talk

Monday, March 16, 2015, 16:15–16:30, EW 201

Carrier dynamics in GaN-nanowire based AlN/GaN hetero-structures doped with Germanium — •Nils Rosemann1, Pascal Hille2, Jan Müßener2, Pascal Becker2, María de la Mata3, César Magén4, Jordi Arbiol3,5, Jörg Teubert2, Jörg Schörmann2, Martin Eickhoff2, and Sangam Chatterjee11Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — 2I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, D-35392 Gießen, Germany — 3Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, ES-08193 Bellaterra, CAT, Spain — 4Laboratorio de Microscopas Avanzadas, Instituto de Nanociencia de Aragon-RAID, Universidad de Zaragoza, ES-50018 Zaragoza Spain — 5Institucio Catalana de Recerca I Estudis Avantas (ICREA), ES-08010 Barcelona, CAT, Spain

Wide gap materials based on AlN/GaN are promising candidates for opto electronic devices in the UV-range. Here, nanowires (NWs) are of particular interest as they exhibit a significantly reduced potential for structural defects compared to bulk due to efficient strain-relaxation during the self-assembled growth. We investigate the influence of Ge doping which has a much larger covalent radius than Si or Mg on a series of AlN/GaN structures based on GaN NWs using a streak-camera setup with high spatial resolution.

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