Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 80: 2D Materials Beyond Graphene: TMDCs, Silicene and Relatives (organized by O)

TT 80.3: Hauptvortrag

Mittwoch, 18. März 2015, 15:30–16:00, MA 005

2D silcon materials: From single layer silicene to double-layer structures and multi-layer stacks — •Patrick Vogt — Institut für Festkörperphysik,Technische Universität Berlin, Deutschland

Silicene, a new silicon allotrope with a graphene-like honeycomb structure, has attracted considerable interest, because its topology confers to it the same remarkable electronic properties as those of graphene [1]. Additionally, silicene might have a potential advantage of being easily integrated in current Si-based nano/micro-electronics offering novel technological applications. However, silicene does not exist in nature and had to be synthesized on a substrate material [2].

We will describe the recent development on the epitaxial formation of single layer silicene on Ag(111), including structural and electronic properties. Based on these results we will look at the growth of silicene double-layer and multi-layer structures and discuss if they can be explained by the stacking of single silicene sheets [3]. If confirmed, such multi-layer structures could open the way towards the technological applicability of silicene.

[1] G.G. Guzmán-Verri, L.C. Lew Yan Voon, Phys. Rev. B 76, 075131 (2007); S. Lebègue and O. Eriksson, Phys. Rev. B, 79 115409 (2009); S. Cahangirov et al., Phys. Rev. Lett. 102, 236804 (2009).

[2] P. Vogt et al., Phys. Rev. Lett. 108, 55501 (2012); C.-L. Lin et al., Appl. Phys. Exp. 5, 045802 (2012); B. Feng et al., Nano Lett. 11, 3507 (2012); A. Fleurence et al., Phys. Rev. Lett. 108, 245501 (2012).

[3] P. Vogt et al., Appl. Phys. Lett. 104, 021602(2014), De Padova et al., Appl. Phys. Lett. 102, 163106 (2013)

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