Berlin 2015 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 80: 2D Materials Beyond Graphene: TMDCs, Silicene and Relatives (organized by O)
TT 80.5: Talk
Wednesday, March 18, 2015, 16:15–16:30, MA 005
Photocurrent studies on semiconducting MoS2 — •Anna Vernickel1,2, Marina Hoheneder1,2, Eric Parzinger1,2, Alexander Holleitner1,2, and Ursula Wurstbauer1,2 — 1Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4a, 85748 Garching, Germany — 2Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 München, Germany
Atomically thin molybdenum disulfide (MoS2) has gained increasing interest as very promising material for novel and innovative device applications. Its bandgap in the visible range and the transition to a direct semiconductor in the single-layer case make MoS2 particularly suitable for optoelectronic devices. We report on extensive photocurrent spectroscopy studies of single and few-layer MoS2 in order to investigate their optoelectronic properties. We discuss the impact of Schottky contacts and thermoelectric contributions to the observed photocurrent. To further investigate the underlying photocurrent dynamics, nanoscale electronic circuits facilitating access to the photocurrent evolution on a picosecond time scale are prepared. We gratefully acknowledge financial support by NIM and BaCaTec.