Heidelberg 2015 – wissenschaftliches Programm

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A: Fachverband Atomphysik

A 5: Atomic systems in external fields

A 5.2: Vortrag

Montag, 23. März 2015, 14:45–15:00, C/kHS

The effect of bound state dressing on laser assisted radiative recombination — •Robert A. Müller1,2, Andrey Surzhykov2, Daniel Seipt2, and Stephan Fritzsche1,21Friedrich-Schiller-University Jena, Germany — 2Helmholtz-Institute Jena, Germany

Radiative recombination is the capture of a continuum-state electron into a bound state of an ion, accompanied by the emission of a photon. If the system is exposed to an external laser field the process is commonly called laser assisted radiative recombination (LARR). LARR is mainly discussed as a part of the so called three step model in high harmonic generation and as a process to stimulate the formation of antihydrogen [1]. During the recent years a number of theoretical studies have been performed aiming for an analytical description of the laser assisted capture of an electron [2]. In most of these works either (i) the interaction between the continuum electron and the nucleus or (ii) the laser dressing of the bound state is neglected. In this contribution, therefore, we present a theoretical study of laser assisted radiative recombination accounting for both effects in an approximate way. Calculations are performed for bare low-Z ions and optical laser fields up to 1014W/cm2. Based on our calculations we found that the dressing of the bound state introduces additional asymmetries in the spectrum of the emitted photons. Moreover we could show that differences in the total cross section of LARR and the laser free process can be explained by the pertubation of the ionic wave function.

[1] D.B. Milošević and F. Ehlotzky, Phys. Rev. A 65, 042504 (2002)

[2] G. Shchedrin and A. Volberg, J. Phys. A 44, 245301 (2011)

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