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Regensburg 2016 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 11: Poster

DF 11.14: Poster

Wednesday, March 9, 2016, 18:00–20:00, Poster E

Fabrication and characterization of epitaxial BiAlO3 thin films — •Johanna Fischer, Cécile Carrétéro, Vincent Garcia, Stéphane Fusil, Agnes Barthélémy, and Manuel Bibes — Unité Mixte de Physique CNRS/Thales, 1 Av. Fresnel, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France

For applications in information technology ferroelectrics with a high critical temperature are desired [1]. BiAlO3 is such a material and may replace the existing, environmentally harmful lead-based composites in the future [2,3]. This study is dedicated to the epitaxial growth of thin films of BiAlO3 on (001)-oriented single crystalline LaAlO3 and SrTiO3 substrates using pulsed laser deposition. We monitor the thin film growth in situ via reflection high energy electron diffraction (RHEED). To improve the crystalline quality a conductive interlayer of LaNiO3, acting also as a bottom electrode, is deposited between the substrate and the BiAlO3 thin film. We characterize the structural properties, thickness as well as interface and surface roughness of our samples using high resolution X-ray diffractometry and reflectometry. The surface topography is determined by atomic force microscopy and the ferroelectric properties by piezoresponse force microscopy.
J.Zylberberg et al., Chem. Mater. 19, 6385-6390 (2007)
P. Baettig et al., Chem. Mater. 17, 1376-1380 (2005)
J.Y.Son et al., Appl. Phys. Lett. 92, 222911 (2008)

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