DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2016 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 52: Ion and Electron Beam Induced Processes

Thursday, March 10, 2016, 17:00–18:15, H11

17:00 DS 52.1 High Current LMIS for Ion Implanters and Single-ended Accelerators — •Philipp Laufer, Daniel Bock, Wolfgang Pilz, Lothar Bischoff, and Martin Tajmar
17:15 DS 52.2 Milling and imaging techniques at the helium ion microscope for sub 2 nm nanopore fabrication — •Daniel Emmrich, Emanuel Marschewski, Jani Kotakoski, Achim Nadzeyka, Frank Nouvertné, Jannik Meyer, André Beyer, and Armin Gölzhäuser
17:30 DS 52.3 Tuning pattern symmetry by choosing the substrate in reverse epitaxy — •Martin Engler, Xin Ou, and Stefan Facsko
17:45 DS 52.4 Energy loss and charge exchange of slow highly charged ions in graphene — •Richard Wilhelm, Elisabeth Gruber, Valerie Smejkal, Janine Schwestka, Roland Kozubek, Anke Hierzenberger, Marika Schleberger, Stefan Facsko, and Friedrich Aumayr
18:00 DS 52.5 Properties of TiO2 films grown by reactive ion beam sputter deposition — •Thomas Lautenschläger, Eric Thelander, Daniel Spemann, and Carsten Bundesmann
100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2016 > Regensburg