Regensburg 2016 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 12: Photovoltaics (Joint session of HL and DF, organized by HL)
HL 12.2: Vortrag
Montag, 7. März 2016, 15:15–15:30, H2
Combined Black Silicon Textures for Advanced Antireflective Surfaces — •Maria Gaudig1,2, Jens Hirsch1,3, Alexander N. Sprafke2, Dominik Lausch3, Norbert Bernhard1,3, and Ralf B. Wehrspohn2,4 — 1Anhalt University of Applied Sciences, Technologies of Photovoltaics Group, Bernburger Str. 55, D-06366 Köthen — 2Martin Luther University Halle-Wittenberg, Institute of Physics, Group microMD, Heinrich-Damerow-Str. 4, D-06120 Halle (Saale) — 3Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Straße 12, D-06120 Halle (Saale) — 4Institute for Mechanics of Materials IWM, Walter-Hülse-Str. 1, D-06120 Halle (Saale)
Black silicon (b-Si) promises with its extremely low reflectivity to become a real alternative to wet chemical textured silicon in the PV industry. In this work, the nano texturing is realized with a maskless SF6/O2 plasma etch process. Compared to the wet chemical texturing, this method provides benefits like reduced silicon waste, independence of prior surface treatment and crystal orientation and the variation of the texture forms by different plasma processes by different plasma processes. We showed two different plasma textures with absorption about 95 %: (I) a needle like texture (needle height/width ~ 500/100-200 nm) with a strong antireflection and (II) parabolic pits (height/width ~ 2/1 micron) with improved light trapping. In this contribution, we want to go one step further and combine these two techniques to exploit the optical benefits of both textures. For this purpose, the two etch processes are applied successively on the wafer. The experimental data will be discussed and advantages will be highlighted.