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HL: Fachverband Halbleiterphysik
HL 15: Quantum Dots and Wires: Fabrication and Devices
HL 15.3: Talk
Monday, March 7, 2016, 15:15–15:30, H16
In(Ga)As/GaAs quantum dots grown on GaP/Si(001) investigated on the atomic scale — •Celina S. Schulze1, Xue Huang2, Christopher Prohl1, Vivien Füllert1, Stavros Rybank1, Scott J. Maddox3, Stephen D. March3, Seth R. Bank3, Minjoo L. Lee2, and Andrea Lenz1,2 — 1Technische Universität Berlin, Institut für Festkörperphysik, Germany — 2Yale University, Department of Electrical Engineering, USA — 3The University of Texas at Austin, Microelectronics Research Center and ECE Dept., USA
The epitaxial growth of III-V laser structures on Si(001) substrates is of high interest for future applications in the silicon-device technology. In this work the atomic structure, stoichiometry, and optical properties of InAs/InGaAs quantum-dot-in-a-well structures grown in a GaAs matrix on an exactly oriented GaP/Si(001) template are studied. Similar photoluminescence spectra are observed for nanostructures grown on GaP/Si(001) compared to those on GaAs(001) substrates. For a fundamental understanding of these optical properties a detailed knowledge of the atomic structure is required, which is ideally studied using cross-sectional scanning tunneling microscopy (XSTM). In detailed XSTM experiments quantum dots with lateral sizes of about 20 nm and heights up to 8 nm were observed. An inhomogeneous In concentration indicates strong segregation effects.
This project was supported by the DFG, project LE 3317/1-1, and the Air Force Office of Scientific Research (AFOSR MURI Award No. FA9550-12-1-0488).