Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.50: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

In Plane Gate transistors based on GaAs as sensors for dielectrics — •Benjamin Feldern, Sascha Valentin, Arne Ludwig, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150, 44801 Bochum

In-Plane Gate transistors (IPG) [1] based on Al_xGa_1−xAs / GaAs HEMTs are used for the sensing of gases and liquids in the environment of the IPGs. For this purpose, IPGs are written in GaAs HEMT structures using Focused Ion Beam (FIB) implantation. In this work, the transconductance of IPGs in different gaseous and liquid environments is examined. It is found that the dielectric changes the transconductance of the IPG which in turn is attributed to the change in the electric field in the half space that contains the dielectric. In addition, the effect of surface treatment is examined. It is found that the surface states additionally screen the dielectric and thus reduce the effect of the dielectric. As an outlook, a possible passivation of the devices is envisaged. Hereby, we intend to shorten the time constant of the gate * source/drain transconductance signal path from ms towards the RC-time-constant of the inherent in-plane geometry, being orders of magnitudes shorter. [1] J. Nieder, A D. Wieck, P. Grambow, H. Lage, D. Heitmann, K. v. Klitzing, and K. Ploog, "One-dimensional lateral field-effect transistor with trench gate-channel insulation", Appl. Phys. Lett . 57, 2695 (1990).