Regensburg 2016 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 62: Gallium Nitride: Optical and Electronic Properties
HL 62.2: Talk
Wednesday, March 9, 2016, 15:00–15:15, H17
Control of optical polarization properties by anisotropic strain in non- and semipolar GaInN/GaN quantum wells — •F. A. Ketzer1, P. Horenburg1, E. R. Buss1, H. Bremers1, U. Rossow1, F. Tendille2, P. De Mierry2, P. Vennéguès2, J. Zuniga-Perez2, and A. Hangleiter1 — 1Institut für Angewandte Physik, Technische Universität Braunschweig — 2Centre de Recherche sur l’Hétéro-Epitaxie, Valbonne, France
In this contribution we show evidence of successful manipulation of anisotropic strain in non- and semipolar multi quantum well (MQW) GaInN/GaN structures. Using AlInN interlayers with different compositions and thicknesses prior to our QWs we are able to control the strain and therefore modify the properties of the emitted light significantly. The growth conditions for the active zone have been kept unchanged. Our samples are grown via low pressure MOVPE on m-oriented pseudo-bulk and (1122) GaN templates grown on patterned r-sapphire substrates. We determine the composition and strain of our MQWs by high resolution X-ray diffraction. With polarization resolved photoluminescence (PL) spectroscopy at low and room temperature we analyze the influence of the unusual anisotropic strain on optical properties due to changes in the valence band structure. The manipulated QWs show good optical properties compared to regular structures. For m-plane we achieve polarization of more than 90% at 445nm and 25% at 525 nm, while the semipolar samples show polarizations of 7% and 18% at 550 nm and 580 nm, respectively. In order to understand the behaviour k·p calculations were compared to our measurements.