Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 86: Oxide Semiconductors for Device and Energy Applications 2

HL 86.6: Vortrag

Donnerstag, 10. März 2016, 16:15–16:30, H11

Monitoring Proton Diffusion in Thin Films of Tungsten Oxide — •Simon Burkhardt¹, Sabrina Darmawi¹, Matthias T. Elm^1,2, and Peter J. Klar¹ — ¹I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen — ²Physikalisch-Chemisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 17, 35392 Gießen

The reversible change of the optical properties of materials due to the electrochemical insertion of ions is called electrochromism. Tungsten-VI oxide (WO₃) and its electrochromic properties have been intensively studied since 1969 as a model system which nowadays can be found in applications like smart window systems or other coated glasses. However fundamental questions concerning the colouration mechanism are still under discussion. A combination of electrochemical proton insertion and in situ UV/Vis-transmission spectroscopy is applied to provide new insights. With the developed set up it is not only possible to investigate the time-dependence of the colouration behaviour, but it also allows a spatially resolved analysis of the colouration process and thus the ion diffusion in electrochromic thin films. To investigate the diffusion of protons, thin films of WO₃ are deposited on TCO-coated substrates via electron beam evaporation and coated with a structured PMMA layer to enable local ion insertion. Significant differences in the colouration behaviour of amorphous and crystalline WO₃ films can be observed which will be compared with a simulation of lateral 1D diffusion processes.