Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 89: Quantum Dots and Wires: Lasing
HL 89.2: Vortrag
Donnerstag, 10. März 2016, 16:15–16:30, H13
Imaging the lasing emission of semiconductor nanowires — •Walter Dickmann1, Max Riediger1, Robert Röder1, Robert Buschlinger2, Carsten Ronning1, and Ulf Peschel2 — 1Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany — 2Institut für Festkörpertheorie und Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
The forthcoming limitations of conventional on-chip electronic circuits make the development of miniaturized photonic circuits desirable, which should be driven by coherent nanoscale light sources. Semiconductor nanowires are very promising as such functional device, because they provide efficient waveguiding in sub-wavelength diameter scales as well as lasing above a material dependent threshold. The emission features of single ZnO NWs are investigated in a head-on setup, as they highly affect the coupling efficiency into envisaged photonic circuits. Direct imaging of the far-field emission allows the characterization of the transverse mode(s) as well as their polarization features. This is realized by calculating the Stokes parameters from Fourier mappings of the far field. The measured intensity distributions are unambiguously assigned to the respective transverse lasing modes in agreement with FDTD simulations: For NW diameters below 180 nm, only the fundamental mode HE11 lases, while in thicker NWs additionally the TE01 mode contributes significantly.