Regensburg 2016 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 90: Poster III

HL 90.7: Poster

Thursday, March 10, 2016, 16:00–19:00, Poster A

Co-evaporation of alternative buffer layers in CZTSSe solar cells — •Max Reimer¹, Markus Neuwirth¹, Lwitiko Mwakyusa¹, Michael Wolfstädter^1,2, Erik Ahlswede², Michael Powalla^2,3, Heinz Kalt¹, and Michael Hetterich¹ — ¹Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — ²Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg, 70565 Stuttgart, Germany — ³Light Technology Institute, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany

Cu₂ZnSn(S,Se)₄ (CZTSSe) has drawn wide interest as an alternative absorber layer in thin-film solar-cells due to its composition of environmentally friendly and low-cost materials. However, CZTSSe solar cells suffer from their low open-circuit voltage and hence from a low efficiency. The solar cell structure of CZTSSe solar cells is mainly adopted from the well-established Cu(In,Ga)Se₂ solar cells and thus CdS is typically used as buffer layer. The CdS buffer layer could be one limiting factor for the low open-circuit voltage due to a non-optimal band alignment between the buffer and the absorber. It also reduces the short-circuit current since its band gap is too small, leading to parasitic absorption. In this study we co-evaporate different II-VI semiconductors as alternative buffer layers on CZTSSe solar cells. The buffer layers are analysed concerning their capability as suitable buffer layers for CZTSSe solar cells.