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MA: Fachverband Magnetismus

MA 17: Poster Session I

MA 17.45: Poster

Tuesday, March 8, 2016, 09:30–12:30, Poster B1

Investigation on new TMR stacks for inverse magnetrostrictive sensors — •Niklas Dohmeier¹, Günter Reiss¹, Karsten Rott¹, Ali Tavassolizadeh², Dirk Meyners², Eckhard Quandt², and Hendrik Hölscher³ — ¹Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Germany — ²Institute for Materials Science, Christian-Albrechts-Universität zu Kiel — ³Institute of Microstructure Technology, Karlsruhe Institute of Technology (KIT)

We show new TMR stacks for magnetostrictive sensors based on CoFeB  /  MgO   /   CoFeB tunnel junctions.
With a free CoFeB layer the direction of its magnetization is not well defined, as in the earlier stacks.
Therefore, in order to achieve the highest sensitivity, a bias field is required to set the magnetization of the free layer at the optimum direction.
CoFeB layers. Below the barrier the exchange bias is induced via the antiferromagnet MnIr. The upper part is pinned with an artificial antiferromagnet consisting of MnIr and CoFe layers.
Via two consecutively field coolings with different temperatures and field orientations exchange bias in different directions was achieved.
These TMR stacks have been made by magnetron sputtering and investigated by magneto-optical Kerr effect (MOKE), TMR measurements and four point bending experiments.