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MA: Fachverband Magnetismus

MA 22: Magnetic Semiconductors (jointly with HL)

MA 22.1: Talk

Tuesday, March 8, 2016, 14:00–14:15, H31

Magnetic Semiconductor (Ga,Mn)As Studied by Fluctuation Spectroscopy — •Martin Lonsky¹, Jan Teschabai-Oglu¹, Klaus Pierz², Hans Werner Schumacher², and Jens Müller¹ — ¹Physikalisches Institut, Goethe-Universität, Frankfurt (M), Germany — ²Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany

In spintronics, both charge and spin degrees of freedom of the electronic transport properties are utilized. Recent studies on diluted magnetic semiconductors (DMS), as for instance (Ga,Mn)As, raised hopes of applications combining the logic operations of semiconductor devices with the information storage capabilities of magnetic elements. However, ferromagnetism at room temperature has not yet been achieved in DMS, and the underlying mechanism is still subject of investigation. In this context, theoretical studies have discussed the percolation of magnetic polarons as a possible origin of spontaneous magnetization [1]. Motivated by recent results of a diverging 1/f-noise magnitude in the ferromagnetic semimetal EuB₆, where the existence of percolating nanoscale magnetic clusters has been demonstrated [2], we apply fluctuation spectroscopy to (Ga,Mn)As in order to gain a better understanding of the coupling between charge transport and magnetism. Systematic (magneto-)transport studies are conducted on epitaxial thin films of (Ga,Mn)As [3] with different growth parameters.
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