Regensburg 2016 – scientific programme
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MM: Fachverband Metall- und Materialphysik
MM 15: Poster session I
MM 15.31: Poster
Monday, March 7, 2016, 18:00–20:00, Poster B3
On the influence of temperature and dopant concentration on Cu-Si phase formation — •Honeyeh Matbaechi Ettehad1,3, Stefan E. Schulz1,2, and Alexander Heinrich3 — 1Technische Universität Chemnitz, Center for Microtechnologies, D-09107 Chemnitz, Germany — 2Fraunhofer Institute for Electronic Nano Systems (Fraunhofer ENAS), Technologie-Campus 3, D-09126 Chemnitz, Germany — 3Infineon Technologies AG, Wernerwerkstr. 2, D-93049 Regensburg, Germany
One of the reliability issues of semiconductor devices is the interaction between Copper (Cu) and Silicon (Si) while contacting the solder material with the side wall of the semiconductor die. Cu from the lead frame can diffuse into Si by diffusing through the solder material. So, this could lead to crack or failure of the device due to strain that result from volume increase. Nucleation and growth of CuSix precipitates in Si has been studied by thermal treatment of copper layer in the range of 250-450°C on various commercially available silicon substrates, high-doped and low-doped. For all of the base materials the reaction between Cu and Si starts at lower temperatures in the range of 300-350°C, and leads to the formation of Cu3Si. Number density and diameter of precipitates for different base materials and annealings were assessed experimentally and characterized by means of FIB, SEM and optical microscope. The influence of different base materials on number density of the CuSi precipitation was investigated. Significant differences in number density and size of precipitates are seen for various temperatures and dopant concentrations and will be discussed.