Regensburg 2016 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 42: Functional materials III: Actuators, sensors and functional devices
MM 42.1: Vortrag
Mittwoch, 9. März 2016, 15:45–16:00, H53
Potential impurity dopants in molybdenum oxide — •Juliana Schell1,2, Carlos Díaz-Guerra3, Katharina Lorenz4, and João Guilherme Martins Correia1,5 — 1Isotope Mass Separator On-Line ISOLDE, CERN, Switzerland — 2Universität des Saarlandes, Saarbrücken, Germany — 3Dpto. Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Spain — 4Instituto Superior Técnico, Universidade de Lisboa, Portugal — 5Centro de Ciências e Tecnologias Nucleares, Universidade de Lisboa, Portugal
Important technological applications, especially as a promising material for future electrochromic imaging devices have motivated the present work where we investigate at the atomic scale the introduction of potential dopants (Cd, Lu) in molybdenum oxide by ion implantation. Cd in MoO3 is intended to be an electrical dopant and may improve the transport properties of these materials while rare earth doping is investigated for their light emission characteristics. At ISOLDE-CERN Perturbed Angular Correlation Spectroscopy (PAC), has been used to study recovery of defects and the local situation of implanted 111mCd and 172Lu on single crystals as a function of annealing and measuring temperatures. The electric field gradients (EFG) show evidence for Cd or Lu occupying two regular sites on MoO3. In the case of the Lu/Yb, most of the probe atoms interact with lattice or electronic defects. This might be related to irregular lattices sites, damaged environment or dynamic electronic effects resulting from the electronic recombination after decay of 172Lu.