DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

MM: Fachverband Metall- und Materialphysik

MM 52: Topical session: In-situ Microscopy with Electrons, X-Rays and Scanning Probes in Materials Science VI - Structural transitions

MM 52.4: Vortrag

Donnerstag, 10. März 2016, 12:45–13:00, H38

Influence of patterned stress states on hydrogen loading in Vanadium thin films studied by electrochemical hydrogenography — •Anshu Tyagi, Florian Döring, Hans-Ulrich Krebs, and Astrid Pundt — Universität Göttingen, Institut für Materialphysik, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

It has been shown that the mechanical stress state of a metal film sensitively affects the chemical potential of hydrogen in the metal.[1] The stress state of a film can be changed by the adhesion of the metal film to the substrate and can be modulate by patterning the adhesion conditions. [2] Stress sensitive Vanadium thin films act as model systems in this work. These films are sputter deposited onto transparent glass substrates. Patterning is performed using Palladium and Polycarbonate layers. The hydrogen uptake in these films is studied using Hydrogenography which monitors the film transparency and reflectivity.[3] We apply this method using electrochemical loading in a light-microscope. This electrochemical Hydrogenography allows to optically probe for the local hydrogen concentration.

Comparative studies on different adhesion conditions are done by in-situ EMF measurements. This provides the related chemical potentials including information about the phase boundaries. The transmission and reflection spectra are discussed with respect to these data.

References [1] S.Wagner, A. Pundt, APL 92 (2008) 051914. [2] A. Pundt, E. Nikitin, R. Kirchheim, P. Pekarski, Acta Mater. 52 (2004) 1579. [3] R. Gremaud. M. Slaman, H.Schreuders, B.Dam, and R.Griessen, APL 91 (2007) 231916.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2016 > Regensburg