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O: Fachverband Oberflächenphysik
O 16: Surface State Spectroscopy II
O 16.5: Talk
Monday, March 7, 2016, 16:00–16:15, H4
In operando strain-dependent HAXPES of VO2 thin films on piezoelectric PMN-PT — •Arndt Quer1, Kerstin Hanff1, Matthias Kallaene1, Adrian Petraru2, Lars-Philip Oloff1, Hermann Kohlstedt2, and Kai Rossnagel1 — 1Institute of Experimental and Applied Physics, University of Kiel, 24098 Kiel, Germany — 2Department of Nanoelectronics, University of Kiel, 24143 Kiel, Germany
The class of transition-metal oxides provides candidate materials for the realization of so-called Mottronic devices that make use of ultrafast and energy-efficient switching between distinct states of correlated electrons.
A paradigmatic material is VO2, which undergoes a first-order structural transition from a low-temperature monoclinic phase to a high-temperature rutile phase at a transition temperature of about 340 K and simultaneously switches from insulating to metallic behavior by a five orders of magnitude resistance jump.
Interestingly in VO2 films, insulator-to-metal transition can be tuned to some degree.
Here we use hard x-ray photoelectron spectroscopy (HAXPES) to directly study the electronic structure changes in VO2 films on PMN-PT substrates as a function of temperature and in situ applied lattice strain.
Our results show clear changes in shape and position of the core level induced by strain and ferroelectric influence at the device-interface of the PMN-PT substrate.