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Regensburg 2016 – scientific programme

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O: Fachverband Oberflächenphysik

O 68: Nanostructures at Surfaces: 1D, 2D Structures and Networks

O 68.6: Poster

Wednesday, March 9, 2016, 18:15–20:30, Poster A

ARPES Studies of the Bi/InAs(100) InterfaceOlivier Heckmann1,2, •Maria Christine Richter1,2, Uros Djukic1, Weiming Wang3, Ivana Vobornik4, Jean-Michel Mariot5, Jan Minar6,7, Jürgen Braun6, Hubert Ebert6, and Karol Hricovini1,21LPMS, Université de Cergy-Pontoise, Cergy-Pontoise, France — 2DSM/IRAMIS/SPEC, CEA Saclay, Gif-sur-Yvette, France — 3Tongji University, Shanghai 200092, China — 4APE beamline, Sincrotrone Trieste, Area Science Park, Basovizza, Italy — 5LCP-MR, Université P et M Curie/CNRS, Paris, France — 6LMU Munich, Munich, Germany — 7University of West Bohemia, Czech Republic

In this contribution we present ARPES studies of Bi/InAs(100) interface. Bismuth deposition followed by annealing of the surface results in the formation of one full Bi monolayer decorated by Bi-nanolines. We found that the building up of the interface does affect the electronic structure of the substrate. As a consequence of weak interaction, bismuth states are placed in the gaps of the electronic structure of InAs(100). We observe a strong resonance of the Bi electronic states close to the Fermi level; its intensity depends on the photon energy and the photon polarization. These states show nearly no dispersion when measured perpendicular to the nanolines, confirming their one-dimensionality. Interestingly, Bi atoms behave as donors, as their presence results in the appearance of an accumulation layer.

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