Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 89: Oxides and Insulator Surfaces II
O 89.13: Vortrag
Donnerstag, 10. März 2016, 18:15–18:30, H4
HfO2 grow by ALD on Si(111)-H terminated stepped surface — •Zied Rouissi1, Massimo Tallarida2, and Dieter Schmeißer1 — 1Applied Physics and Sensors, K.-Wachsmann-Allee 17, D-03046 Cottbus, Germany — 2ALBA Synchrotron, 08290 Cerdanyola del Vallès, Barcelona, Spain
We studied by STM the growth of HfO2 on Si (111)-H stepped surface (miscut by 0.5∘). The steps are aligned in the [11-2] direction. In order to obtain well defined steps and terraces we prepare the sample by chemical etching in 40% Nh4F. In our in-situ study we investigate the ALD growth of HfO2 by TDMAH and H2O [1-2]. We follow for the first four ALD cycles the distribution of the nucleation sites. We also study the influence of the substrate temperature by comparing the growth within the ALD window at 300K and 580K. We observed that at RT the as-grown HfO2 forms stripes which are oriented normal to the step orientations. Further growth starts from the step edges and proceeds towards the terraces. Defects created by the etching processes act as nucleation sites for 3D islands. Based on our STM data we are able to correlate the structural changes on that inert and stepped Si(111)-H surface during ALD with experimental [3] and theoretical [4] results obtained for planar Si(100) surfaces.
[1] M. Tallarida et al., Semicond. Sci. Technol. 27, 074010 (2012)
[2] K. Kolanek et al., Thin Solid Films 518, 4688 (2010)
[3] K. Kolanek et al., J. Vac. Sci. Technol. A 31, 01A104 (2013)
[4]L. Riikka et al., J. Appl. Phys.96, 7686 (2004)