Regensburg 2016 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 59: Low-Dimensional Systems: Poster Session

TT 59.23: Poster

Wednesday, March 9, 2016, 15:00–18:30, Poster D

Topological Insulators in Bismuth-Halide and Related Systems — •Anna Isaeva, Bertold Rasche, and Michael Ruck — Institut für Anorganische Chemie, Technische Universität Dresden, Bergstr. 66, 01069 Dresden

Employing the concept of "confined metals" [1] we have established tentative guidelines toward the directed search of new topological insulators based on crystal-structure features. A 2D TI fragment embedded as a low-dimensional structural fragment into the bulk structures of bismuth-rich metal-salt hybrids can account for weak or strong 3D TI properties of the entire compound. The salt-like part can be constructed from polar iodide anions that favor for more defect-free, stoichiometric compounds as opposed to chalcogenides.

This approach has by now been exemplified by two 3D weak topological insulators, Bi14Rh3I9 [2,3] and Bi2TeI, and a 3D strong topological insulator, β-Bi4I4 [4], which electronic structure is in proximity of both the weak 3D TI phase and the trivial insulator phase. These bulk materials are built by two different 2D TI fragments: a decorated honeycomb intermetallic layer that resembles graphene and a bismuth bilayer, which is a building unit of the elemental bismuth structure.

References

[1] A. Isaeva, B. Rasche, M. Ruck. Phys. Stat. Solidi RRL, 1-2 (2013), 39.

[2] B. Rasche et al. Nat. Mater. 12 (2013), 422.

[3] C. Pauly et al. Nat. Phys. 11 (2015), 338.

[4] G. Autes et al. Nat. Mater. 15 (2016) 154.