Dresden 2017 – wissenschaftliches Programm
CPP 49.6: Poster
Mittwoch, 22. März 2017, 18:30–21:00, P2-OG1
Stack of ultrathin Gallium layers — •Sebastian Runde, Heiko Ahrens, and Christiane A. Helm — Inst. of Physics, Greifswald University, D-17487 Greifswald
Fabrication of ultrathin conductive layers is important for many technological applications. We describe a forced wetting method for the formation of ca. 3 nm thin gallium layers that extent up to 10 cm2. Optical and atomic force microscopy image the layers on different length scales. X-ray reflectivity measurements show that the Ga layers immediately form a sub-nm thick oxide coating at the film/air surface under ambient conditions. Different substrates are used successfully (Si wafers, partially oxidized Si wafers, borosilicate glass). Up to five layers can be formed by forced wetting on top of each other. According to X-ray reflectivity, the repeat distance of the Ga layers in the stack is 2.7-2.8 nm.