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Dresden 2017 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 14: Various Topics II

DF 14.3: Talk

Wednesday, March 22, 2017, 15:40–16:00, GER 37

In situ hard x-ray photoemission spectroscopy of barrier-height control at metal/PMN-PT interfacesErik Kröger1, Adrian Petraru2, Arndt Quer2, Rohit Soni2, Matthias Kalläne1,3, Nikolay Pertsev4, •Hermann Kohlstedt2, and Kai Rossnagel11Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany — 2Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, D-24143 Kiel, Germany — 3Ruprecht-Haensel-Labor, Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany — 4Ioffe Institute, St. Petersburg, Russia

Metal-ferroelectric interfaces form the basis of novel electronic devices. A key effect determining the device functionality is the bias-dependent change of the electronic energy-level alignment at the interface. Here, hard x-ray photoelectron spectroscopy (HAXPES) is used to determine the energy-level alignment at two metalferroelectric interfaces Au versus SrRuO3 on the relaxor ferroelectric Pb(Mg1/3Nb2/3)0.72Ti0.28O3 (PMN-PT) directly in situ as a function of electrical bias. The bias-dependent average shifts of the PMN-PT core levels are found to have two dominant contributions on the 0.1 to 1 eV energy scale: one depending on the metal electrode and the remanent electric polarization and the other correlated with electric-field-induced strain. The results suggest electric-field-induced modifications of the polarization distribution as a novel way to control the barrier height at such interfaces.

E. Kröger et al., Phys. Rev. B 93, 235415 (2016).

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