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Dresden 2017 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 2: Various Topics I

DF 2.7: Talk

Monday, March 20, 2017, 11:50–12:10, GER 37

The pyroelectric coefficient of free standing GaN grown by HVPE — •Sven Jachalke1, Patrick Hofmann2, Gunnar Leibiger3, Frank S. Habel4, Erik Mehner1, Tilmann Leisegang1,4, Dirk C. Meyer1, and Thomas Mikolajick2,51Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg, Germany — 2NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden, Germany — 3Freiberger Compound Materials GmbH, Am-Junger-Löwe-Schacht 5, 09599 Freiberg, Germany — 4Samara National Research University, Moskovskoye Shosse 34, Samara 443086, Russia — 5Institute for Semiconductors and Microsystems, TU Dresden, Nöthnitzer Str. 64, 01187 Dresden, Germany

Here, we present the first temperature dependent measurements of the pyroelectric coefficient of free standing, and strain free GaN grown by hydride vapour phase epitaxy (HVPE). The Sharp-Garn method is applied to extract the pyroelectric coefficient from the electrical current response of the crystals subjected to a sinusoidal temperature excitation in a range of 0°C to 160°C. To avoid compensation of the pyroelectric response by an internal conductivity, insulating GaN crystals were used by applying carbon, manganese and iron doping during HVPE growth. Different pyroelectric coefficients observed at room temperature due to the doping correlate well with the change of the lattice parameter c. The obtained data is compared to previously published theoretical and experimental values of thin film GaN and discussed in terms of a strained lattice.

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