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Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 35: 2D Materials Beyond Graphene IV (jointly with O)

DS 35.9: Talk

Wednesday, March 22, 2017, 17:15–17:30, WIL A317

Band gap transition in few-layer ReS2 investigated by photoemission k-space microscopy — •Mathias Gehlmann1, Lukasz Plucinski1, Slavomír Nemšák1, Irene Aguilera2, Gustav Bihlmayer2, Pika Gospodarič1, Markus Eschbach1, Ewa Młyńczak1, Giovanni Zamborlini1, Vitaliy Feyer1, Florian Kronast3, Philipp Nagler4, Tobias Korn4, Christian Schüller4, Stefan Blügel2, and Claus Michael Schneider11PGI-6, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany — 2PGI-1/IAS-1, Forschungszentrum Jülich GmbH and JARA, D-52425 Jülich, Germany — 3Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, D-12489 Berlin, Germany — 4Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany

ReS2 is a promising candidate for novel electronic and sensor applications. The low crystal symmetry of this van der Waals compound leads to highly anisotropic optical and vibrational behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum resolved study of the electronic structure of monolayer, bilayer, and bulk ReS2. Using photoemission k-space microscopy in combination with density functional theory calculations we demonstrate a significant 3D delocalization of the valence electrons in bulk ReS2. Furthermore, we directly observe the evolution of the valence band dispersion in our photoemission experiments as a function of the number of layers, revealing a varying character of the band gap.

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