Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Postersession I
DS 36.50: Poster
Mittwoch, 22. März 2017, 17:00–19:00, P2-EG
Raman study of orthorombic Ga2O3 — •Daniel Zink, Marcel Weinhold, Max Kracht, Martin Eickhoff, and Peter J. Klar — Justus-Liebig-Universität Gießen, I. Physikalisches Institut, Heinrich-Buff-Ring 16, 35392 Gießen
In the fifties Roy et al reported five polymorphs of Ga2O3 obtained from solvothermal synthesis. Subsequently many studies of their catalytic properties werer performed. The availability of epitaxial synthesis routes recently gave rise to a new interest in this material system, also in the context of optoelectronic devices. Therefore a comprehensive structural analysis is required. The more so as the different synthesis ways with nanocrystalline mixed phases led to a confused naming of the Ga2O3-polymorphs. We will give a brief review of all known Ga2O3-structures and present Raman measurements of Sn-doped Ga2O3 prepared by plasma assisted MBE.