Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 40: Focussed Session: Memristive Devices for Neuronal Systems II

DS 40.4: Vortrag

Donnerstag, 23. März 2017, 16:15–16:30, CHE 89

A Concentrated Model of the Double Barrier Memristive Device for LTSpice Simulations — •Enver Solan1, Sven Dirkmann2, Martin Ziegler3, Mirko Hansen3, Hermann Kohlstedt3, Thomas Mussenbrock4, and Karlheinz Ochs11Ruhr-Universität Bochum, Lehrstuhl für Digitale Kommunikationssysteme, 44780 Bochum — 2Ruhr-Universität Bochum, Lehrstuhl für Theoretische Elektrotechnik, 44780 Bochum — 3Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, 24143 Kiel — 4Brandenburgische Technische Universität Cottbus-Senftenberg, Fachgebiet Theoretische Elektrotechnik, 03046 Cottbus

The double barrier memristive device is a technical implementation of a memristive system. It consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-like contact. In principle, it is a nonlinear resistor with memory, whereby the resistance depends on energetic states at the interfacial barriers. This leads to a continuous resistance range, which is desired for neuromorphic applications. To understand the underlying physical and chemical phenomena, a distributed model of the device, using a kinetic Monte-Carlo simulation, has been implemented. Such simulations are very time-consuming and therefore not suitable for real-time implementations, e.g. for emulation purposes. Starting from the distributed model a concentrated model of the device with physically meaningful parameters has been developed. It can be used for reproducible analyses and emulation purposes. The concentrated model was verified by comparisons with Monte-Carlo simulations as well as with measurements.

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