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Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 41: Layer Properties: Electrical, Optical, and Mechanical Properties II

DS 41.2: Talk

Thursday, March 23, 2017, 15:15–15:30, CHE 91

ZrO2 as a high-k dielectric matrix for electrical applications - formation of embedded Ge nanocrystals and a Ta-stabilized orthorhombic phase — •David Lehninger1, Julia Wünsche1, Frank Schneider1, Volker Klemm2, Mykhaylo Motylenko2, David Rafaja2, and Johannes Heitmann11Institut für Angewandte Physik, TU Bergakademie Freiberg, D-09596 Freiberg — 2Institut für Werkstoffwissenschaft, TU Bergakademie Freiberg, D-09596 Freiberg

Germanium nanocrystals (nc) embedded in dielectric matrices are discussed as absorbers for third generation solar cells, as sensitizers for rare earth elements, and as charge trapping layer for nonvolatile memories. Here, the formation of Ge nc in a TaZrOx matrix was studied. Single GeTaZrOx and TaZrOx layers as well as superlattices consisting of alternating GeTaZrOx- and TaZrOx-layers with different compositions were sputtered. Crystallization of Ge and TaZrOx was characterized by transmission electron microscopy, Raman scattering, and X-ray diffraction. It has been found that Ge nc with spherical shape and well-defined size embedded in amorphous TaZrOx can be formed. The superior properties of single layers of such Ge nc for charge trapping applications were already shown [1]. At elevated annealing temperatures the amorphous TaZrOx matrix crystallizes in a non-centrosymmetric orthorhombic phase. This makes this material system attractive for fully CMOS compatible ferroelectric applications. [1] D. Lehninger, P. Seidel, M. Geyer, F. Schneider, V. Klemm, D. Rafaja, J. von Borany, J. Heitmann, Appl. Phys. Lett. 106, 023116 (2015)

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