Dresden 2017 – wissenschaftliches Programm
DS 7.1: Vortrag
Montag, 20. März 2017, 12:30–12:45, CHE 89
Atomic layer deposition (ALD) for the fabrication of HfO2- and TiO2- based resistive switching memories — •Alexander Hardtdegen, Hehe Zhang, and Susanne Hoffmann-Eifert — Peter Grünberg Institute and JARA-Fit, Forschungszentrum Jülich, 52425 Jülich, Germany
One common growth method for ultrathin metal oxide layers used in resistive switching devices is atomic layer deposition. Often used materials for these devices are e.g. HfO2 and TiO2, which are generally deposited in the amorphous phase. Nevertheless resistive switching behaves differently even in cells out of the apparently same material, as the switching properties are very sensitive to the amount of oxygen in the functional layers.
In this study, plasma-enhanced ALD HfO2 is combined with three qualitative different (sub-)stoichiometric TiO2-layers, comparing either layers which were deposited with liquid injection and bubbler supplied TDMAT or thermal processes with processes based on oxygen plasma as co-reactant. The bilayers were integrated into metal-insulator-metal structures and electrically characterized. The switching behavior gives information about the oxygen amount within the different TiO2-layers.