Dresden 2017 – wissenschaftliches Programm
DS 7.3: Vortrag
Montag, 20. März 2017, 13:00–13:15, CHE 89
A hybrid molecular beam epitaxy based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures — •Siamak Nakhaie1, Joseph M. Wofford1, Thilo Krause1, Xianjie Liu2, Manfred Ramsteiner1, Michael Hanke1, Henning Riechert1, and J. Marcelo J. Lopes1 — 1Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany — 2Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
Devices based on the graphene/hexagonal boron nitride (h-BN) materials system offer a host of potential advantages, including high speed, extremely low power consumption, and various novel functionalities. As a result, the large-area synthesis of this material has been extensively researched over the past few years using various crystal growth techniques. In this contribution, we introduce a method for the production of h-BN/graphene heterostructures which allows both materials to form on the surface of the Ni substrate. We exploit the finite solubility of C in Ni by first saturating the metal film, then depositing a few-layer thick h-BN film from elemental B and N on the exposed Ni surface, and finally ramping the sample temperature down to controllably precipitate the C and form graphene at the interface between the h-BN and Ni. The resulting heterostructures are studied using various characterization techniques, such as UV and visible Raman spectroscopy, x-ray photoelectron spectroscopy and synchrotron-based grazing incidence spectroscopy to learn about their structural properties and quality.