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HL: Fachverband Halbleiterphysik
HL 10: Semiconductor Lasers I
HL 10.7: Talk
Monday, March 20, 2017, 11:30–11:45, POT 06
Mode-locking dynamics and pulse train stability of monolithic two-section quantum-well semiconductor lasers emitting at 1070 nm with different lengths and gain-to-absorber section length ratios — •Christoph Weber1, Andreas Klehr2, Andrea Knigge2, and Stefan Breuer1 — 1Institute of Applied Physics, Technische Universität Darmstadt, Schlossgartenstr. 7, 64289 Darmstadt, Germany — 2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
We experimentally investigate the mode-locking (ML) dynamics of passively mode-locked multi-section multi quantum well narrow ridge waveguide semiconductor lasers emitting at a peak wavelength of 1070 nm. ML stability is quantified by pulse train timing jitter (TJ) as well as the relative amplitude jitter (AJ) in dependence on laser biasing by gain injection current and absorber reverse bias voltage. Initial results on pulse train stability analysis have been presented in C. Weber et al., Proc. SPIE, 9892-77, 2016, and on mode-locking stability of a quantum well laser in C. Weber et al., Proc IEEE Internat. Conf. on Transparent Optical Networks, We.P.29, 2016. In this contribution, lasers with different total cavity lengths and absorber to gain section length ratios are studied and regimes of stable and unstable emission are identified by stability analysis, and studies on average and peak optical power, pulse width and pulse repetition rate, enabling a direct comparison of ML regimes.