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Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 37: III-V Semiconductors

Tuesday, March 21, 2017, 09:30–12:30, POT 112

09:30 HL 37.1 GaAs Based Nanowire Lasers and their integration onto Silicon Waveguides — •Tobias Kostenbader, Thomas Stettner, Jochen Bissinger, Daniel Ruhstorfer, Philipp Zimmermann, Gerhard Abstreiter, Gregor Koblmüller, and Jonathan Finley
09:45 HL 37.2 Ferromagnetic (Ga,Mn)P: magneto-transport properties and co-doping effect — •Chi Xu, Ye Yuan, Mao Wang, Hendrik Hentschel, Roman Böttger, Manfred Helm, and Shengqiang Zhou
10:00 HL 37.3 GaSb-based Double Barrier Resonant Tunneling Diodes with Ternary Emitter Prewells — •Andreas Pfenning, Georg Knebl, Fabian Hartmann, Robert Weih, Andreas Bader, Monika Emmerling, Martin Kamp, Sven Höfling, and Lukas Worschech
10:15 HL 37.4 In-Plane Gate transistors for use of sensing gaseous and liquid dielectric environments. — •Benjamin Feldern, Sascha R. Valentin, Arne Ludwig, and Andreas D. Wieck
10:30 HL 37.5 Bond strength inversion in (In,Ga)As — •Stefanie Eckner, Konrad Ritter, Philipp Schöppe, Erik Haubold, Sven Bauer, Erich Eckner, Mark C. Ridgway, and Claudia S. Schnohr
  10:45 Coffee Break
11:15 HL 37.6 Optical confinement and conversion of exciton polaritons in a structured (Al,Ga)As microcavity — •Alexander S. Kuznetsov, Paul Helgers, Klaus Biermann, and Paulo V. Santos
11:30 HL 37.7 Evaluation of growth parameters of InAs nanowires toward vertical field effect transistor devices — •Stampfer Lukas, Jonathan Becker, Stefanie Morkötter, Julian Treu, Gerhard Abstreiter, Jonathan J. Finley, and Gregor Koblmüller
11:45 HL 37.8 Strain distribution in highly mismatched GaAs/(In,Ga)As core/shell nanowires — •Leila Balaghi, René Hübner, Genziana Bussone, Raphael Grifone, Mahdi Ghorbani, Arkady Krasheninnikov, Gregor Hlawacek, Jörg Grenzer, Harald Schneider, Manfred Helm, and Emmanouil Dimakis
12:00 HL 37.9 Formation of self-organized nanostructures by droplet epitaxy on AlGaAs(111)B — •Alexander Karlisch and Dirk Reuter
12:15 HL 37.10 Optical Characterization of Quaternary GaInAsBi Semiconductor Alloys — •Julian Veletas, Lukas Nattermann, Thilo Hepp, Kerstin Volz, and Sangam Chatterjee
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