Dresden 2017 – wissenschaftliches Programm
HL 4.5: Topical Talk
Montag, 20. März 2017, 11:30–12:00, CHE 89
Understanding the defects in Cu(In,Ga)Se2 solar cell: a correlative microscopy approach — •Oana Cojocaru-Mirédin1, Torsten Schwarz2, Roland Mainz3, and Daniel Abou-Ras3 — 1University of RWTH Aachen, I. Institut of Physics, Sommerfeldstraße 14, 52056 Aachen, Germany — 2Max-Planck Institut für Eisenforschng, Max-Planck Straße 1, 40237 Düsseldorf, Germany — 3Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany
In Cu(In,Ga)Se2 solar cells, interfaces between individual layers in a thin-film stack, such as p-n heterojunctions, or structural defects such as grain boundaries or stacking faults, often influence substantially the performance of the device . To further develop these solar devices, one needs to understand the relationship between structural and chemical properties for specific interfaces and defects. Diffraction techniques in transmission electron microscopy or scanning electron microscopy are excellent tools for structural investigations, i.e., the crystallographic structure of stacking faults and grain boundary. The present work shows an advanced, correlative study combining atom-probe tomography and various electron microscopy techniques on defects in Cu(In,Ga)Se2 absorber. Indeed, different approaches for determining structural and chemical property relationships will be presented. The experimental results to be presented will also be compared directly with the existing theoretical models on defects and phase formation in photovoltaic materials.
 M. Müller et al., Journal of Applied Physics 115 (2014) 023514.