Dresden 2017 – wissenschaftliches Programm
HL 4.6: Vortrag
Montag, 20. März 2017, 12:00–12:15, CHE 89
Controllable crystallization of chalcogenide thin films for photovoltaic and electrical applications — •Ilia Korolkov, Michel Cathelinaud, Xian-Hua Zhang, and Jean-Luc Adam — Verres et céramique, ISCR, Université de Rennes 1, Rennes, France
Chalcogenide materials (i.e. materials containing sulfur (S), selenium (Se) and/or tellurium (Te)) are of great importance in the context of solar energy harvesting because of their suitable electronic properties such as extended absorption spectrum, direct band gap and high absorption coefficient.
In this work we present the investigation on chalcogenide thin films of 40Sb2Se3-40GeSe2-20CuI composition, which upon the crystallization showed the formation of the conductive percolation network formed by Sb2Se3 rods covered with Cu2GeSe3 microcrystals. We optimized targets composition varying the amount of iodine and copper iodide. Various deposit and heating treatment regimes were applied as well. We revealed an important role of the iodine which dopes Sb2Se3, increasing drastically its conductivity and serving as an electron donor. We established that pre-deposit of a very thin film of CuI (about 3nm) prior to a major thin film deposit influences positively on crystallization and conductive channels formation during the heating treatment. A simple photovoltaic cell of [ITO|ZnO (or Sb2Se3 : I)|40Sb2Se3-40GeSe2-20CuI|Au] configuration shows the short circuit current up to 10mA/cm2 and open circuit voltage up to 0,2V.