Dresden 2017 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 52: Devices
HL 52.2: Talk
Wednesday, March 22, 2017, 09:45–10:00, POT 06
Detection of Terahertz radiation with a graphene-based Schottky Diode — •Maria Schlecht1, Christian Müller-Landau1, Alexander Glas1, Sascha Preu2, Stefan Malzer1, and Heiko B. Weber1 — 1Lehrstuhl für Angewandte Physik, FAU Erlangen-Nürnberg (FAU), Erlangen, Germany — 2Dept. of Electrical Engineering and Information Technology, Technische Universität Darmstadt, Germany
We report on the design, fabrication and characterization of a graphene-based Schottky diode for detection of Terahertz (THz) radiation. With epitaxially grown graphene on n-type silicon carbide one can define ohmic and Schottky contacts side-by-side on a silicon carbide wafer, forming a lateral Schottky diode [1]. Due to the non-linearity of the IV-curve THz radiation is rectified and one measures a DC current proportional to the amplitude of the THz radiation. The responsivity scales with the second derivative of the IV-curve. Furthermore, we detected THz radiation from 70 GHz to 350 GHz using a nipnip-THz source [2]. We achieved a maximal responsivity of 30 mA/W, i.e. 1200 V/W at 78 GHz. The ability of the device to rectify THz radiation is strongly limited by the RC-roll off [2]. In order to increase the 3dB roll off frequency, we compared the nitrogen-implanted Schottky diodes with phosphor-implanted ones which have a much lower serial resistance. [1] S. Hertel et al. Nature comm. 3:951 (2012) [2] S. Preu, et al. J. Appl. Phys. 109, 061301 (2011)