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Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 64: Poster: Photovoltaics and Optics

HL 64.36: Poster

Wednesday, March 22, 2017, 15:00–19:00, P1C

Analysis and preparation of In2S3:V intermediate band solar cells — •Tanja Jawinski1,2, Leonard Wägele1, Holger von Wenckstern2, Marius Grundmann2, and Roland Scheer11Martin-Luther-University Halle-Wittenberg, Institute of Physics, 06120 Halle, Germany — 2Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany

The maximum efficiency of a standard single junction solar cell is given by the Shockley Queisser limit of around 33%. To overcome this limit an intermediate band, which allows the absorption of photons with energies lower than the band gap Eg can be introduced. In addition, thermalization losses can be reduced since within intermediate band solar cells materials with higher Eg than that of conventional cells are used. According to theoretical calculations In2S3 doped with vanadium is a promising candidate for such intermediate band devices.

We grew intrinsic In2S3:V on n-TCOs ZnO:Al and SnO:F by physical co-evaporation of the elements. In2S3:V p-i-n solar cells are formed with ZnCo2O4 and NiO which are prepared by pulsed laser deposition. Current-voltage measurements in the dark reveal rectification of up to 4 orders of magnitude. Measurements under illumination as well as external quantum efficiency measurements provide a proof of principle, even though the short circuit current and the open circuit voltage need to be improved by optimizing the deposition parameters. For deeper understanding we compare solar cells with varying V-concentrations.

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