Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 69: Quantum Dots: Transport Properties I
HL 69.10: Vortrag
Donnerstag, 23. März 2017, 12:15–12:30, POT 151
Toward a metrological quantification of the conversion efficiency in GaAs nanowire based photodetectors — •Davide Cammi1, Beatrice Rodiek2, Kseniia Zimmermann1, Martin Friedl3, Nick Morgan3, Anna Fontcuberta i Morral3, Stefan Kück2, and Tobias Voss1 — 1Institut für Halbleitertechnik (IHT) und Laboratory for Emerging Nanometrology (LENA), TU Braunschweig, Hans-Sommer-Straße 66, 38106 Braunschweig — 2Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig — 3Laboratory of Semiconductor Materials (LMSC), Ecole Polytechnique Fédérale de Lausanne (EPFL), Route Cantonale, 1015 Lausanne, Schweiz
The design of novel photodetectors based on semiconductor nanowires with diameters of few hundred nanometers or below may lead to a significant enhancement of the photoconductive gain and an increase of the detection speed in comparison to the corresponding planar technology. However, a precise quantification of the photodetection performance of such devices requires the development of a metrological procedure for their calibration. In this contribution, we discuss the main challenges and the steps which are required, in order to achieve this goal. In particular, we propose an experimental approach which combines optical and electrical methods for the determination of a two-dimensional, spatially resolved mapping of the device*s photoresponse. We focus the investigation in particular on contacted single GaAs nanowires, which act as photodetectors in the near infrared spectral range.