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Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 70: Topological Insulators I (joined session with TT)

HL 70.3: Vortrag

Donnerstag, 23. März 2017, 10:15–10:30, POT 251

Occupied topological surface states in strained α-SnVictor Rogalev1, •Tomáš Rauch2, Markus Scholz1, Felix Reis1, Lenart Dudy1, Andrzej Fleszar3, Vladimir Strocov4, Jürgen Henk2, Ingrid Mertig2, 5, Jörg Schäfer1, and Ralph Claessen11Physikalisches Institut und Röntgen Center for Complex Material Systems, Universität Würzburg, 97074 Würzburg, Germany — 2Institute of Physics, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale), Germany — 3Institut für Theoretische Physik und Astronomie, Universität Würzburg, 97074 Würzburg, Germany — 4Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen, Switzerland — 5Max Planck Institute for Microstructure Physics, 06120 Halle (Saale), Germany

Unstrained α-Sn is a semimetal with a non-trivial band ordering at the Γ point of the bulk Brillouin zone: E8+) > E7) > E7+). Strain in (001) direction lifts the degeneracy of the Γ8+ level at the Fermi energy. We demonstrate that compressive strain turns the system into a strong topological insulator, whereas tensile strain causes a transition into the topological Dirac semimetal phase.

I will present the results of calculations carried out along experimental findings obtained by soft X-ray angle-resolved photoemission. I will show that the existence of a previously unknown surface state located in the occupied projected bulk band structure of α-Sn is unveiled by both experimental and theoretical methods. In addition, its topological origin was confirmed by calculating the topological invariants of the bulk bands.

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