Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 75: Quantum Dots: Transport Properties II

HL 75.3: Vortrag

Donnerstag, 23. März 2017, 15:30–15:45, POT 151

Comparison of the carrier transfer properties between an electrolyte and GaInN- and GaNP-nanowires — •Jan Philipps1, Sara Hölzel1, Pascal Hille1, Jörg Schörmann1, Jan Stehr2, Irina Buyanova2, Charles Tu3, Detlev Hofmann1, and Martin Eickhoff11I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Germany — 2Department of Physics, University of Linköping, Sweden — 3Department of Electrical and Computer Engineering, University of California, San Diego, USA

Ga1−xInxN nanowires with In concentrations x of about 0.3 and GaP/GaNxP1−x core/shell nanowires (x ∼ 0.08) show interesting properties for the charge carrier transfer from the semiconductor into an electrolyte, which might be used for sensing applications or catalytic water splitting. The transfer can be initiated by visible light and depending on an applied bias electron- or hole-transfers are achieved. The processes can be monitored by photocurrent measurements or in more detail by electron paramagnetic resonance experiments using spin trapping agents. We find that the processes strongly affect the near bandgap emission in Ga1−xInxN nanowires but have only minor effect on the emission of GaP/GaNxP1−x nanowires. The results will be discussed in the frame of the surface band bending model of the semiconductor/electrolyte interface.

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