Dresden 2017 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 8: Photovoltaics
HL 8.6: Vortrag
Montag, 20. März 2017, 11:00–11:15, POT 251
Preparation and Analysis of In2S3:V Intermediate Band Thin-Film Absorbers for Solar Cells — •Leonard Wägele1, Tanja Jawinski1,2, Christoph Bahret1, Holger von Wenckstern2, Marius Grundmann2, and Roland Scheer1 — 1Institute of Physics, Martin-Luther-University Halle-Wittenberg, 06120 Halle, Germany — 2Institute of Experimental Physics II, University of Leipzig, 04103 Leipzig, Germany
To achieve higher energy conversion efficiencies above the Shockley-Queisser limit, one can use larger band gap materials provided with an intermediate band. This allows the absorption of low energy photons via the intermediate band, while high energy photons can generate charge carriers with reduced thermalization losses. One theoretically suitable material for such a device is In2S3 combined with transition metals. We grow thin-film In2S3:V with physical co-evaporation from the elements. We use SEM, EDX, XRD and Raman spectroscopy to study the structural changes of vanadium variations. We show that vanadium is successfully incorporated into the In2S3 structure. Furthermore, UV-VIS-NIR spectroscopy, photoluminescence and photoconductivity are used to study the electro-optical properties of the material. We find that the absorption increases slightly with incorporated vanadium, while the below band gap photoluminescence decreases. Additionally, we show results from In2S3:V p-i-n solar cells utilizing both SnO:F and ZnO:Al as n-TCOs and ZnCo2O4 and NiO as p-TCOs. EQE and JV-measurements reveal the formation of functioning solar cells with so far low short circuit currents.