Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 82: Quantum Information Systems
HL 82.1: Vortrag
Freitag, 24. März 2017, 09:30–09:45, POT 81
Resonant driving of silicon vacancies in 4H-SiC — •Matthias Widmann1, Roland Nagy1, Matthias Niethammer1, Ilja Gerhardt1,2, Ivan G. Ivanov3, Sophia Economou4, Takeshi Oshima5, Nguyen Tien-Son3, Cristian Bonato6, Sang-Yun Lee7, Erik Janzén3, and Jörg Wrachtrup1,2 — 13rd Institute of Physics, IQST and Research Center SCOPE, Stuttgart — 2Max-Planck Institute, Stuttgart — 3Department of Physics, Chemistry and Biology, Linkoeping University — 4Department of Physics, Virginia Tech, Blacksburg — 5National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki — 6Institute of Photonics and Quantum Science, Heriot-Watt University — 7Center for Quantum Information, Korea Institute of Science and Technology (KIST), Seoul
Spins associated to atomic scale defects in solids are attractive as sensitive probes and are promising candidates for quantum information processing (QIP) [1]. Our research is based on spin defects in silicon carbide (SiC), a technologically-relevant
wide-bandgap semiconductor which offers spin-active defects with long coherence times at room temperature [2]. In this work, we extend our previous single spin study [2] by investigating optical and spin properties of the silicon vacancy in 4H-SiC via resonant optical and spin driving and discuss their potential use for quantum computing and quantum communication [3].
F. Jelezko et al, PRL 100, (2012).
M. Widmann et al, Nat. Mater 14 (2015).
Ö. Soykal et al, PRB 93 (2016).