Dresden 2017 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 87: Carbon: Diamond and others
HL 87.7: Vortrag
Freitag, 24. März 2017, 11:30–11:45, POT 06
Voltage-dependent photocurrent spectroscopy in surface-conductive diamond devices — •Philipp Beck1, Patrick Simon1, Ankit Rathi1, Jose A. Garrido2, and Martin Stutzmann1 — 1Walter Schottky Institut und Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany — 2Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain
For many applications of nitrogen-vacancy (NV) centers in diamond especially in the field of quantum technology the understanding of their electronic addressability is highly desirable. Based on hydrogen- terminated and thus surface-conductive diamond enriched with NV centers, we fabricate an all diamond device based on selective surface oxidation for the creation of highly insulating potential barriers for surface-conducting holes with widths in the range of 50nm-500nm. Across these hydrogenated-oxidized lateral heterostructures we measure spectrally resolved photocurrent as a function of temperature and illumination intensity and examine the influence of nitrogen-related defects and other defect states on the observed photocurrents. Additionally, we explain a nonlinear I-U characteristics of the photocurrent in these devices by its specific electronic band structure and examine the potential of such structures for an electrical control of the spectral energy of selected defect states.